N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V. RDS(ON) = 4 Ω @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23-T package.

文件：137.35 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 0.25A, RDS(ON) = 3 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. Lead free product is acquired. RDS(ON) = 4 W @VGS = 4.5V.

文件：888.18 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 0.2A, RDS(ON) = 3 W @VGS = 10V. RDS(ON) = 4 W @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. ESD protected up to 2KV RoHS compliant. SOT-23-T package.

文件：817.6 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.28A, RDS(ON) = 2Ω @VGS = 10V. RDS(ON) = 3Ω @VGS = 5V. ■ High dense cell design for low RDS(ON). ■ Rugged and reliable. ■ SOT-23package.

文件：473.42 Kbytes 页数：5 Pages

CET

华瑞

Minimum real estate required

文件：118.5 Kbytes 页数：3 Pages

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