COM Express Type 10 Mini Module with Intel Atom® X7000 or Intel® Core™ i3/N-series Processors

Features ● Intel Atom® X7000 or Intel® Core™ i3/N-series processors (Amston Lake/Alder Lake-N) ● Up to 16GB LPDDR5 memory onboard ● Supports up to 4 PCI Express lanes ● Up to 2 SATA 3.0 ● 2 USB 3.2 and 8 USB 2.0 ● eMMC and TPM 2.0 onboard

文件：489.56 Kbytes 页数：3 Pages

AXIOMTEK

艾讯科技

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -7.0A, RDS(ON) = 32mW @VGS = -10V. RDS(ON) = 50mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：618.99 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：424.59 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：439.89 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -6.2A, RDS(ON) = 33mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：664.2 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05763 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET uses advanced trench technology

文件：1.24862 Mbytes 页数：5 Pages

DOINGTER

杜因特

P-Channel Enhancement Mode Field Effect Transistor

文件：446.23 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：461.48 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞