CED6362数据表ic资料供应代理华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CED6362	文件：436.45 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20.7A, RDS(ON) = 45mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 52mW @VGS = 4.5V. 文件：436.45 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CED6362	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEM6362	文件：423.28 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 6A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 49mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. 文件：423.28 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEU6362	文件：436.45 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20.7A, RDS(ON) = 45mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 52mW @VGS = 4.5V. 文件：436.45 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CHA6362-QXG	文件：1.05448 Mbytes Page：16 Pages	17.7 - 19.7GHz Power Amplifier 文件：1.05448 Mbytes 页数：16 Pages	UMS	UMS

更多CED6362供应商更新时间2025-12-11 15:36:00