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EPE6030G

10Base-TInterfaceModulewithEnhancedCommonModeAttenuation

PCA

PCA ELECTRONICS INC.

FBR6030

60AmpHighVoltageSCHOTTKYBARRIERRECTIFIERSMechanicalDimensions

Features ■HIGHCURRENTCAPABILITY WITHLOWVF ■HIGHEFFICIENCYw/LOWPOWERLOSS ■HIGHSURGEVOLTAGEAND TRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0

FCIFirst Components International

戈采戈采企业股份有限公司

FDB6030

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030BL

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=48A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030

N-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    CED6030L

  • 功能描述:

    30V N Channel MOS

供应商型号品牌批号封装库存备注价格
CET
24+
TO-252
455
询价
SOT-252
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
CET
25+23+
TO252
75232
绝对原装正品现货,全新深圳原装进口现货
询价
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
CET/華瑞
23+
SOT252
50000
全新原装正品现货,支持订货
询价
CET/華瑞
2022+
SOT252
16000
原厂代理 终端免费提供样品
询价
C
23+
TO-251
6000
原装正品,支持实单
询价
CET
09+
SOT252
2530
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
CET
23+
2800
正品原装货价格低
询价
CET/華瑞
24+
NA/
2530
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多CED6030L供应商 更新时间2025-7-27 16:30:00