N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60V, 3.7A, RDS(ON) = 100 mΩ @VGS = 10V. RDS(ON) = 120 mΩ @VGS = 4.5V. • High dense cell design for low RDS(ON) • Rugged and reliable. • SOT-89 Package

文件：495.95 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：139.22 Kbytes 页数：4 Pages

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N-Channel 6 0-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：989.77 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 5.7A, RDS(ON) = 24mW @VGS = 10V. RDS(ON) = 36mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

文件：655.67 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：754.57 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 5.2A, RDS(ON) = 46mW @VGS = 10V. RDS(ON) = 52mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

文件：513.99 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.6A, RDS(ON) = 90mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. Lead free product is acquired.

文件：620.68 Kbytes 页数：4 Pages

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N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

文件：1.77573 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：417.25 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：318.65 Kbytes 页数：4 Pages

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