N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：139.22 Kbytes 页数：4 Pages

CET

华瑞

N-Channel 6 0-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：989.77 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N Channel MOSFET

CET

华瑞

Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs

GENERAL DESCRIPTION The DS3251 (single), DS3252 (dual), DS3253 (triple), and DS3254 (quad) line interface units (LIUs) perform the functions necessary for interfacing at the physical layer to DS3, E3, or STS-1 lines. Each LIU has independent receive and transmit paths and a built-in jitter attenu

文件：925.55 Kbytes 页数：71 Pages

DALLAS

Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs

GENERAL DESCRIPTION The DS3251 (single), DS3252 (dual), DS3253 (triple), and DS3254 (quad) line interface units (LIUs) perform the functions necessary for interfacing at the physical layer to DS3, E3, or STS-1 lines. Each LIU has independent receive and transmit paths and a built-in jitter attenu

文件：925.55 Kbytes 页数：71 Pages

DALLAS

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：177.66 Kbytes 页数：9 Pages

MITSUMI

三美