丝印：CEA；Package：DO-214AC；13 To 40V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.31636 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：CEA；Package：DO-214AC；10 To 85V 400W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 400W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.87185 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：CEA；Package：DO-214AC；Surface Mount Transient Voltage Suppressors

Features ● Glass passivated chip ● 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle):0.01 ● High reliability application and automotive grade ● AEC Q101 qualified ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fas

文件：1.32281 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：CEA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.90188 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：CEA；Package：5LdSC70；Ultra Low ON-Resistance, Low Voltage, Single Supply, SPST Analog Switches

文件：581.28 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：CEA；Package：SMA；Surface Mount Transient Voltage Suppressors

文件：348.57 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：CEA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：277.03 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：CEA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：917.49 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.5A, RDS(ON) = 280mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. RoHS compliant.

文件：478.15 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60V, 3.7A, RDS(ON) = 100 mΩ @VGS = 10V. RDS(ON) = 120 mΩ @VGS = 4.5V. • High dense cell design for low RDS(ON) • Rugged and reliable. • SOT-89 Package

文件：495.95 Kbytes 页数：5 Pages

CET

华瑞