CEA3055

N-Channel Enhancement Mode Field Effect Transistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

CEA3055

N-Channel 6 0-V (D-S) MOSFET

CEA3055L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

CEA3055L

N-Channel 6 0-V (D-S) MOSFET

CED3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CET3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,4A,RDS(ON)=100mΩ@VGS=10V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CET3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CEU3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CHM3055LAPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT12Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM3055LXPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3.7Ampere FEATURE *Smallpackage.(SC-62/SOT-89) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.