N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60V, 3.7A, RDS(ON) = 100 mΩ @VGS = 10V. RDS(ON) = 120 mΩ @VGS = 4.5V. • High dense cell design for low RDS(ON) • Rugged and reliable. • SOT-89 Package

文件：495.95 Kbytes 页数：5 Pages

CET

华瑞

N-Channel 6 0-V (D-S) MOSFET

文件：989.83 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 8A, RDS(ON) = 150mΩ @VGS = 10V. RDS(ON) = 180mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-251 & TO-252 package.

文件：591.69 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 4A, RDS(ON)=100mΩ @ VGS=10V. ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-223 Package.

文件：487.74 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 3.7A, RDS(ON)=100mΩ @ VGS=10V. RDS(ON)=120mΩ @ VGS=4.5V. ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-223 Package.

文件：494.66 Kbytes 页数：5 Pages

CET

华瑞