H40N03E

N-ChannelEnhancement-ModeMOSFET(25V,40A)

Features •RDS(on)=16mΩ@VGS=10V,ID=20A •RDS(on)=25mΩ@VGS=4.5V,ID=20A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo

IRF40N03

N-CHANNELPowerMOSFET

FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦FastSwitching ♦SimpleDriveRequirement ♦LowGateCharge

IRF40N03

N-CHANNELPowerMOSFET

[magic-matsu]

ME40N03

N-Channel30-V(D-S)MOSFET

ME40N03P

N-Channel30-V(D-S)MOSFET

ME40N03P-G

N-Channel30-V(D-S)MOSFET

MI40N03

N-Channel30-V(D-S)MOSFET

MTD40N03

N-Channel30-V(D-S)MOSFET

NTD40N03R

PowerMOSFET45A,25V,N−ChannelDPAK

Features •PlanarHD3eProcessforFastSwitchingPerformance •LowRDS(on)toMinimizeConductionLoss •LowCisstoMinimizeDriverLoss •LowGateCharge •OptimizedforHighSideSwitchingRequirementsin High−EfficiencyDC−DCConverters •ThesearePb−FreeDevices

NTD40N03R

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.