N-Channel Enhancement-Mode MOSFET (25V, 40A)

Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoo

文件：54.65 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Enhancement-Mode MOSFET (25V, 40A)

HSMC

华昕

N-CHANNEL Power MOSFET

[magic-matsu]

文件：90.5 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL Power MOSFET

FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ Fast Switching ♦ Simple Drive Requirement ♦ Low Gate Charge

文件：88.1 Kbytes 页数：4 Pages

SUNTAC

N-Channel 30-V (D-S) MOSFET

文件：1.01583 Mbytes 页数：8 Pages

VBSEMI

微碧半导体