N-Channel Enhancement-Mode MOSFET (25V, 40A)

Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoo

文件：54.65 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Enhancement-Mode MOSFET (25V, 40A)

HSMC

华昕

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：386.95 Kbytes 页数：5 Pages

SAMHOP

三合微科