IRF9240

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRF9240

-11A,-200V,0.500Ohm,P-ChannelPowerMOSFET

-9Aand-11A,-150Vand-200VrDS(on)=0.5Ωand0.7Ω Features: ■Singlepulseavalancheenergyrated ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance

IRF9240

P?밅HANNELPOWERMOSFET

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRF9240

SimpleDriveRequirements

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRF9240SMD

P?밅HANNELPOWERMOSFET

IRF9240-SMD

P-CHANNELPOWERMOSFET

FEATURES •P–CHANNELPOWERMOSFET •HIGHVOLTAGE •INTEGRALPROTECTIONDIODE •AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES

IRFM9240

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFM9240

SimpleDriveRequirements