| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
POWERMOSFETTHRU-HOLE(TO-254AA) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
POWERMOSFETN-CHANNEL(BVdss=-200V,Rds(on)=0.51ohm,Id=-11A) RDS(on)0.51Ω ID-11A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis | IRF International Rectifier | IRF | ||
P?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
12A,200V,0.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.50ohm,Id=-12A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HRS/广濑 |
23+ |
NA/原装 |
9390 |
代理-优势-原装-正品-现货*期货 |
询价 | ||
HIROSE/广濑 |
2508+ |
/ |
273494 |
一级代理，原装现货 |
询价 | ||
HIROSE |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 | ||
HIROSE |
2406+ |
NA |
6680 |
原装正品公司现货 实单来谈 |
询价 | ||
Uno Minda |
200 |
询价 | |||||
AMIS |
24+ |
QFP-44 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
AMIS |
20+ |
MQFP44 |
500 |
样品可出,优势库存欢迎实单 |
询价 | ||
CDE |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 |
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