丝印：CKV2310；Package：TSSOP；CDCVF2310 2.5-V to 3.3-V High-Performance Clock Buffer

1 Features 1• High-Performance 1:10 Clock Driver • Operates up to 200 MHz at V DD 3.3 V • Pin-to-Pin Skew

文件：506.24 Kbytes 页数：25 Pages

TI

德州仪器

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：107.09 Kbytes 页数：2 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.1A , RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 45mW @VGS = 2.5V. RDS(ON) = 60mW @VGS = 1.8V.

文件：501.79 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 4.8A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 45mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 60mW @VGS = 1.8V.

文件：911.11 Kbytes 页数：5 Pages

CET-MOS

华瑞