CDCLVC1310

Ten-Output Low-Jitter Low-Power Clock Buffer

CDCLVC1310_14

Ten-Output Low-Jitter Low-Power Clock Buffer and Level Translator

CDCLVC1310RHBR

Ten-Output Low-Jitter Low-Power Clock Buffer and Level Translator

CDCLVC1310RHBR

Ten-Output Low-Jitter Low-Power Clock Buffer

CDCLVC1310-EVM

包装：盒 功能：时钟缓冲器 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL MODULE FOR CDCLVC1310

CDCLVC1310RHBR

Package：32-VFQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 时钟缓冲器，驱动器 描述：IC CLK BUFFER 3:10 200MHZ 32QFN

CEB1310S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,85A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEB1310SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,88A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CED1310S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,74A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant

CED1310SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,76A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.