丝印：CDCLVC1310；Package：VQFN(RHB)；Ten-Output Low-Jitter Low-Power Clock Buffer and Level Translator

1FEATURES • High-Performance Crystal Buffer With Ultralow Noise Floor of –169 dBc/Hz • Additive Phase Noise/Jitter Performance Is 25 fsRMS (Typ.) • Level Translation With 3.3-V or 2.5-V Core and 3.3-V, 2.5-V, 1.8-V, or 1.5-V Output Supply • Device inputs consist of primary, secondary, and

文件：1.66199 Mbytes 页数：31 Pages

TI

德州仪器

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 85A, RDS(ON) = 8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：930.29 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 88A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：499.33 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 74A, RDS(ON) = 8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant

文件：440.64 Kbytes 页数：5 Pages

CET-MOS

华瑞