CDBCT3100-HF

SMDSchottkyBarrierDiode

Forwardcurrent:3.0A Reversevoltage:20to100V RoHSDevice HalogenFree Features -Leadlesschipform,noleaddamage. -Lowpowerloss,Highefficiency. -Highcurrentcapability,lowVF -PlasticpackagehasUL94V-0. MechanicalData -Case:PackedwithFRPsubstrateandepoxyunde

CDBMH3100-G

SMDSchottkyBarrierRectifiers

CDBMH3100-HF

SMDSchottkyBarrierRectifiers

CDBMH3100-HF

SMDSchottkyBarrierRectifiers

CDBMH3100-HF

SMDSchottkyBarrierRectifiers

CDBMHT3100-HF

SMDSchottkyBarrierRectifiers

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CEM3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,47A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=21mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220package.