CDBCT3100-HF

SMD Schottky Barrier Diode

Forwardcurrent:3.0A Reversevoltage:20to100V RoHSDevice HalogenFree Features -Leadlesschipform,noleaddamage. -Lowpowerloss,Highefficiency. -Highcurrentcapability,lowVF -PlasticpackagehasUL94V-0. MechanicalData -Case:PackedwithFRPsubstrateandepoxyunde

CDBCT3100-HF

包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 3A 3220

CDBMH3100-G

SMDSchottkyBarrierRectifiers

CDBMH3100-HF

SMDSchottkyBarrierRectifiers

CDBMH3100-HF

SMDSchottkyBarrierRectifiers

CDBMH3100-HF

SMDSchottkyBarrierRectifiers

CDBMHT3100-HF

SMDSchottkyBarrierRectifiers

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CEM3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.