CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CEB4060AR

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,15A,RDS(ON)=85mΩ@VGS=10V. •SuperhighdensecelldesignforextremelylowRDS(ON) •Highpowerandcurrenthandlingcapability. •TO-220&TO-263package.

CEB4060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=95mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired.

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CEP4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75mΩ@VGS=10V. RDS(ON)=90mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.