丝印：CD4011BM；Package：SOIC；CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

CMOS NAND Gates

Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te

文件：369.61 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS NAND Gates

Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I

文件：109.33 Kbytes 页数：9 Pages

INTERSIL

丝印：CD4011BM；Package：SOIC；CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

丝印：CM011B；Package：TSSOP；CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

丝印：CM011B；Package：TSSOP；CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

丝印：CM011B；Package：TSSOP；CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

丝印：CM011B；Package：TSSOP；CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of

文件：29.89 Kbytes 页数：3 Pages

INTERSIL