CD4011BMS

CMOS NAND Gates

Description CD4011BMS,CD4012BMS,andCD4023BMSNANDgatesprovidethesystemdesignerwithdirectimplementationoftheNANDfunctionandsupplementtheexistingfamilyofCMOSgates.Allinputsandoutputsarebuffered. CD4011BMS-Quad2Input CD4012BMS-Dual4Input CD4023BMS-Triple3I

CD4011BMS

CMOS NAND Gates

Features •High-VoltageTypes(20VRating) •PropagationDelayTime=60ns(typ.)atCL=50pF, VDD=10V •BufferedInputsandOutputs •StandardizedSymmetricalOutputCharacteristics •MaximumInputCurrentof1Aat18VOverFullPackageTemperatureRange;100nAat18Vand+25oC •100Te

CD4011BMS

CMOS NAND Gates

Description\nCD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.CD4011BMS - Quad 2 Input\nCD4012BMS - Dual 4 Input\nCD4023BMS - Triple 3 Input; • High-Voltage Types (20V Rating)\n• Propagation Delay Time = 60ns (typ.) at CL = 50pF,VDD = 10V\n• Buffered Inputs and Outputs\n• Standardized Symmetrical Output Characteristics\n• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC\n• 100% Tested for;

CD4011BMT

CMOSNANDGATES

CD4011BMT

TheCD4011B,CD4012B,andCD4023Btypesaresuppliedin14-leadhermeticdual-in-lineceramicpackages

CD4011BMT

CMOSNANDGATES