CMOS NAND Gates

Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I

文件：109.33 Kbytes 页数：9 Pages

Intersil

CMOS NAND Gates

Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te

文件：369.61 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS NAND Gates

Description\nCD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.CD4011BMS - Quad 2 Input\nCD4012BMS - Dual 4 Input\nCD4023BMS - Triple 3 Input • High-Voltage Types (20V Rating)\n• Propagation Delay Time = 60ns (typ.) at CL = 50pF,VDD = 10V\n• Buffered Inputs and Outputs\n• Standardized Symmetrical Output Characteristics\n• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC\n• 100% Tested for;

Renesas

瑞萨

CMOS NAND GATES

文件：525.82 Kbytes 页数：13 Pages

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

文件：523.01 Kbytes 页数：12 Pages

TI

德州仪器

CMOS NAND GATES

文件：1.18484 Mbytes 页数：19 Pages

TI

德州仪器