FLEXIMARK CHARACTER HOLDERS CAB

文件：701.18 Kbytes 页数：2 Pages

LAPP

缆普

900 V, 2.5 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss and Lightweight AlSiC Baseplate • High Frequency Operation • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator Typical Applications •

文件：2.09927 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 4 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material • Features Gen4 Technology with Soft Body Diode Typical Applications • EV Chargers • High-

文件：2.66507 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 6 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Aluminum Nitride Ceramic Substrate • Optional Pre-Applied Thermal Interface Material Applications • DC-DC Converters • EV Chargers • High-E

文件：2.12149 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 6 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Re

文件：2.12826 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 6 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Re

文件：2.12826 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Aluminum Nitride Ceramic Substrate • Optional Pre-Applied Thermal Interface Material Applications • DC-DC Converters • EV Chargers • High-E

文件：2.10927 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Re

文件：2.11735 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module

echnical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Aluminum Nitride Ceramic Substrate • Optional Pre-Applied Thermal Interface Material Applications • DC-DC Converters • EV Chargers • High-Ef

文件：2.22276 Mbytes 页数：11 Pages

WOLFSPEED

1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module

echnical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Aluminum Nitride Ceramic Substrate • Optional Pre-Applied Thermal Interface Material Applications • DC-DC Converters • EV Chargers • High-Ef

文件：2.22276 Mbytes 页数：11 Pages

WOLFSPEED