900 V, 2.5 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss and Lightweight AlSiC Baseplate • High Frequency Operation • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator Typical Applications •

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WOLFSPEED

栅极驱动板

900 V, 2.5 mΩ, DM, Half-Bridge, Industrial qualified, SiC Power Module • High power density footprint\n• Ultra low mass (41 g)\n• High junction temperature (175 °C) operation\n• Implements Wolfspeed’s Third Generation SiC MOSFET Technology;

Wolfspeed(CREE)

HTSSOP16

TI

德州仪器

上传：深圳市金芯世纪电子有限公司

SOP8

CHIPANAL

上传：深圳市恒科翔业电子有限公司

SOIC-16-300mil

Chipanalog(川土微)

上传：深圳市禾兴威科技有限公司