1200 V, 4 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material • Features Gen4 Technology with Soft Body Diode Typical Applications • EV Chargers • High-

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WOLFSPEED

1200 V, 4 mΩ, GM, Half-Bridge, Industrial qualified, Silicon Carbide Power Module

1200 V, 4 mΩ, GM, Half-Bridge, Industrial qualified, Silicon Carbide Power Module • Ultra-Low Loss\n• High Frequency Operation\n• Zero Turn-Off Tail Current from MOSFET\n• Normally-Off, Fail-Safe Device Operation\n• Optional Pre-Applied Thermal Interface Material\n• Features Gen4 Technology with Soft Body Diode;

Wolfspeed(CREE)

HTSSOP16

TI

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