| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SILICONPOWER(SWITCHING)TRANSISTORS FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | Zetex Zetex Semiconductors | Zetex | ||
SwitchingTransistor Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features •BVCEO>-12V •IC=-2.5AContinuousCollectorCurrent •ICM=-10APeakPulseCurrent •LowSaturationVoltageE.g.-17mVMax@IC=-100mA. •RCE(sat)=72mΩat2.5Aforalowequivalenton-resistance •625mWpowerdissipation •hFEcharacterisedupto-10Aforhighcurrentgai | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPSiliconPlanarHighPerformanceTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •ExtremelyLowSaturationVoltage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:718 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPTransistor Features ●ForSwitchingandAmplifierApplications. ●ExtremelyLowSaturationVoltage ●ComplementarytoNPNType:FMMT618 | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | PJSEMI | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES |
产品属性
- 产品编号：
C718RJT
- 制造商：
TE Connectivity Passive Product
- 类别：
电阻器 > 通孔式电阻器
- 系列：
C, CGS
- 包装：
卷带（TR）
- 容差：
±5%
- 功率 (W)：
7W
- 成分：
绕线
- 温度系数：
±90ppm/°C
- 工作温度：
-55°C ~ 200°C
- 封装/外壳：
轴向
- 供应商器件封装：
轴向
- 大小 / 尺寸：
0.335" 直径 x 0.866" 长（8.50mm x 22.00mm）
- 描述：
RES 18 OHM 5% 7W AXIAL
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
CAN |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
ST |
10+ |
ZIP-11 |
7800 |
全新原装正品,现货销售 |
询价 | ||
ST |
24+ |
ZIP-11 |
1200 |
询价 | |||
ST |
2025+ |
ZIP-11 |
3645 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IC |
23+ |
SOP-8 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
NEC |
专业铁帽 |
CAN8 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
NEC |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
LG |
95+ |
DIP |
950 |
询价 | |||
LG |
22+ |
DIP |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 | ||
LG |
24+ |
DIP |
990000 |
明嘉莱只做原装正品现货 |
询价 |
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