FMMT717

SILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat)

FMMT717

PNPTransistor

Features ●ForSwitchingandAmplifierApplications. ●ExtremelyLowSaturationVoltage ●ComplementarytoNPNType:FMMT617

FMMT717

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMT717QTA

12VPNPSILICONLOWSATURATIONTRANSISTORINSOT23

FMMT717TA

12VPNPSILICONLOWSATURATIONTRANSISTORINSOT23

FMMT717TA

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMTL717

SOT23PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

Features •BVCEO>-12V •IC=-1.25AContinuousCollectorCurrent •ICM=-4APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMTL717

PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

FEATURES Verylowequivalenton-resistance;RCE(sat)=160mΩat1.25A

FMMTL717

MediumPowerTransistor

Features ●Verylowequivalenton-resistance;RCE(sat)=160mÙat1.25A.

FMMTL717TA

PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR