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M6065HHSN

2.0x2.5mm,3.0V,ClippedSineWave,TCXO/VCTCXO

MTRONPTI

mtronpti

M6065HJSN

2.0x2.5mm,3.0V,ClippedSineWave,TCXO/VCTCXO

MTRONPTI

mtronpti

MAX6065AEUR-T

Precision,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6061–MAX6068areprecision,low-dropout,micropowervoltagereferences.Thesethree-terminaldevicesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlaser-tri

MaximMaxim Integrated Products

美信美信半导体

MAX6065BEUR-T

Precision,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6061–MAX6068areprecision,low-dropout,micropowervoltagereferences.Thesethree-terminaldevicesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlaser-tri

MaximMaxim Integrated Products

美信美信半导体

MAXIM6065

PLASTICENCAPSULATEDDEVICES

DeviceDescription General TheMAX6100isalow-cost,low-dropout(LDO),micropowervoltagereferences.Thisthree-terminalreferencehasanoutputvoltageoptionof1.8V.Itfeaturesaproprietarycurvature-correctioncircuitandlaser-trimmed,thin-filmresistorsthatresultinalowtemperatu

MaximMaxim Integrated Products

美信美信半导体

MDR-6065

ACandDCcoils,latchingandnon-latching

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

MN6065A

1500WATTSPEAKPOWERDISSIPATION

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NCE6065AG

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6065AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6065G

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6065Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

RJP6065

SiliconNChannelIGBTHighSpeedPowerSwitching

*Lowcollectortoemittersaturationvoltage VCE(sat)=1.8Vtyp.(IC=40A,VGE=15V,Ta=25°C)  *Gatetoemittervoltagerating30V *Pb-freeleadplatingandchipbonding

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
BULGIN
20+
开关元件
2896
就找我吧!--邀您体验愉快问购元件!
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Bulgin
22+
NA
80
加我QQ或微信咨询更多详细信息,
询价
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
TRIPODOVERSEASCOLTD
24+
752
询价
AO/万代
23+
TO-251
69820
终端可以免费供样,支持BOM配单!
询价
TOSHIBA/东芝
23+
TO-252
6000
专注配单,只做原装进口现货
询价
TOSHIBA/东芝
23+
TO-252
6000
专注配单,只做原装进口现货
询价
CHINA
23+
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
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SANYO/三洋
23+
TO-220P
3000
原装正品假一罚百!可开增票!
询价
SANYO/三洋
22+
TO-220P
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
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更多C6065P(HEP)供应商 更新时间2021-9-14 10:50:00