| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,54A,RDS(ON)=9mW@VGS=10V. RDS(ON)=13mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,12.5A,RDS(ON)=10mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,45A,RDS(ON)=8.5mW@VGS=10V. RDS(ON)=12mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
2URackmountNetworkAppliancewith4thGenerationIntel®Xeon®ScalableProcessorforNFV Features Upto52coresforNFVneedswithsingle4thGenerationIntel®Xeon® scalableprocessors Upto16DDR5RDIMMmemorytoboostcomputingcapability 8xNMCwithPCIeGen5fornetworking(CompatiblewithGen4&Gen3) Highavailabilitysystemwithredundantsolutions Managing | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
MDL,SIN,1GPP,1:1,SM,TU | pulse Pulse A Technitrol Company | pulse |
替换型号
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AO/万代 |
23+ |
TO-251 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
TOSHIBA/东芝 |
23+ |
TO-252 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
TOSHIBA/东芝 |
23+ |
TO-252 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
CHINA |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
SANYO/三洋 |
23+ |
TO-220P |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
SANYO/三洋 |
22+ |
TO-220P |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
SANYO |
2023+ |
TO-220 |
5800 |
进口原装,现货热卖 |
询价 | ||
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
UTC/友顺 |
2022+ |
TO-263 |
300 |
原厂代理 终端免费提供样品 |
询价 | ||
PULSE |
2021+ |
DIP/SOP |
16500 |
十年专营原装现货,假一赔十 |
询价 |
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