丝印：C5；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C5；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C5；Package：SOT23；45 V, 100 mA PNP general-purpose transistor

Features * General-purpose transistor * Small SMD plastic package

文件：591.62 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C5；Package：TSSOP5；8-stage divider and oscillator

1. General description 74AHC1G4208-Q100 is a 8-stage divider and oscillator. It consists of a chain of 8 flip-flops. Each flip-flop divides the frequency of the previous flip-flop by two, consequently the 74AHC1G4208-Q100 counts up to 28 = 256. The single inverting stage (X1 to X2) functions as

文件：207.21 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C5；Package：SC-70-5；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Excellent Ripple Rejection: 70dB Typical (1.8V Version) - Low Dropout Voltage: 65mV (IOUT=100mA, 3.3V Version) - Low Standby Current: 0.01μA Typical - Low Quiescent Current: 60μA Typical - Extremely Low Noise: 50μVrms Typical - Maximum Output Current: 300mA (Min.) - High Output V

文件：676.08 Kbytes 页数：25 Pages

DIODES

美台半导体

丝印：C5；Package：TSSOP6；Schottky barrier quadruple diode

1. General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Lo

文件：210.84 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C5；Package：SOT1061D；45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.329 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C5；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C5；Package：TO-236AB；45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • AEC-Q101 qualified

文件：251.22 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C5；Package：SC-62；45 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.59 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司