中低压MOS

ChipNobo

无边界

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. -3.6A, RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package

文件：499.89 Kbytes 页数：5 Pages

CET

华瑞

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05753 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ Surface mount Package

文件：111.2 Kbytes 页数：4 Pages

CET

华瑞