丝印：C265；Package：SOT23-5；Designed for 1.65V to 5.5V VCC Operation

General Description The SN74LVC1G126 is a high performance single noninverting buffer operating from a 1.65V to 5.5V supply. This device is fabricated with advanced CMOS technology to achieve ultra-high speed with high output drive. Features ● Designed for 1.65V to 5.5V VCC Operation ● Ov

文件：940.5 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：C265；Package：SOT-23；SN74LVC1G126 Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 3.7 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Inse

文件：2.14108 Mbytes 页数：37 Pages

TI

德州仪器

丝印：C265；Package：SOT-23；SN74LVC1G126 Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 3.7 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Inse

文件：2.14108 Mbytes 页数：37 Pages

TI

德州仪器

丝印：C2655；Package：TO-92MOD；TO-92MOD Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020

文件：1.56524 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Power Amplifier Applications Power Switching Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

文件：149.63 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low saturation voltage, high speed switching time, complementary to 2SA1020. Applications Power amplifier and switching applications.

文件：1.43171 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

文件：61.58 Kbytes 页数：4 Pages

UTC

友顺

NPN Plastic Encapsulated Transistor

FEATURES - Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A) - High speed switching time：tstg=1μs(Typ.) - Complementary to 2SA1020

文件：217.8 Kbytes 页数：3 Pages

SECOS

喜可士

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

文件：282.69 Kbytes 页数：2 Pages

WEITRON

NPN Plastic-Encapsulate Transistor

Features • Collector of 0.9Watts of Power Dissipation. • Collector-current 2.0A • Operating and storage junction temperature range: -55
to +150
• Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS

文件：513.6 Kbytes 页数：2 Pages

MCC