C2655

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications.

C2655

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

C2655

NPN Plastic Encapsulated Transistor

FEATURES -Lowsaturationvoltage：VCE(sat)=0.5V(Max)(IC=1A) -Highspeedswitchingtime：tstg=1μs(Typ.) -Complementaryto2SA1020

C2655

NPN General Purpose Transistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

C2655

NPN Plastic-Encapsulate Transistor

Features •Collectorof0.9WattsofPowerDissipation. •Collector-current2.0A •Operatingandstoragejunctiontemperaturerange:-55
to+150
•EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

C2655

NPN Silicon Epitaxial Planar Transistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. ThetransistorissubdividedintotwogroupsOandY, accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

C2655

TRANSISTOR (NPN)

FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

C2655

isc Silicon NPN Pow Transistor

DESCRIPTION •SiliconNPNepitaxialtype •Lowsaturationvoltage •Complementaryto2SA1020 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Powerswitchingapplications

C2655

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020

C2655

Power Amplifier Applications Power Switching Applications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.