丝印：C2655；Package：TO-92MOD；TO-92MOD Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020

文件：1.56524 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：125.97 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low saturation voltage, high speed switching time, complementary to 2SA1020. Applications Power amplifier and switching applications.

文件：1.43171 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：146.57 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

NPN Plastic-Encapsulate Transistor

Features • Collector of 0.9Watts of Power Dissipation. • Collector-current 2.0A • Operating and storage junction temperature range: -55
to +150
• Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS

文件：513.6 Kbytes 页数：2 Pages

MCC

NPN Plastic Encapsulated Transistor

FEATURES - Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A) - High speed switching time：tstg=1μs(Typ.) - Complementary to 2SA1020

文件：217.8 Kbytes 页数：3 Pages

SECOS

喜可士

Power Amplifier Applications Power Switching Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

文件：149.63 Kbytes 页数：5 Pages

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

文件：61.58 Kbytes 页数：4 Pages

UTC

友顺

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

文件：282.69 Kbytes 页数：2 Pages

WEITRON

isc Silicon NPN Pow Transistor

DESCRIPTION • Silicon NPN epitaxial type • Low saturation voltage • Complementary to 2SA1020 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Power switching applications

文件：255.22 Kbytes 页数：2 Pages

ISC

无锡固电