丝印：C26；Package：SOT765-1；Dual buffer/line driver; 3-state

1. General description The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFFst

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C26；Package：SSOP；SN74LVC2G126 Dual Bus Buffer Gate With 3-State Outputs

1 Features • Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4ns at 3.3V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：1.07692 Mbytes 页数：27 Pages

TI

德州仪器

TO-251 Plastic-Encapsulate Transistors

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：852.9 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSISTOR竊?NPN 竊

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：188.3 Kbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.75 W（ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：211.18 Kbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：67.29 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：56.33 Kbytes 页数：1 Pages

TEL

东电电子

TRANSISTOR竊?NPN 竊

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.75 W（ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：211.18 Kbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：188.3 Kbytes 页数：3 Pages

JIANGSU

长电科技

isc Silicon NPN Pow Transistor

DESCRIPTION • Silicon NPN epitaxial type • Low saturation voltage • Complementary to 2SA1020 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Power switching applications

文件：255.22 Kbytes 页数：2 Pages

ISC

无锡固电