CERAMIC CHIP / HIGH VOLTAGE

文件：1.65637 Mbytes 页数：9 Pages

KEMETKEMET Corporation

基美

CERAMIC CHIP / HIGH VOLTAGE

文件：1.65637 Mbytes 页数：9 Pages

KEMETKEMET Corporation

基美

CERAMIC CHIP / HIGH VOLTAGE

文件：1.65637 Mbytes 页数：9 Pages

KEMETKEMET Corporation

基美

CERAMIC CHIP / HIGH VOLTAGE

文件：1.65637 Mbytes 页数：9 Pages

KEMETKEMET Corporation

基美

CERAMIC CHIP / HIGH VOLTAGE

文件：1.65637 Mbytes 页数：9 Pages

KEMETKEMET Corporation

基美

CERAMIC CHIP / HIGH VOLTAGE

文件：1.65637 Mbytes 页数：9 Pages

KEMETKEMET Corporation

基美

CERAMIC CHIP / HIGH VOLTAGE

文件：1.65637 Mbytes 页数：9 Pages

KEMETKEMET Corporation

基美

丝印：C180；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C180；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01% Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C1815；Package：TO-92；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：256.029 Kbytes 页数：4 Pages

TOSHIBA

东芝