丝印：C16；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C16；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C160；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C160；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C1675；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector Current General Purpose Switching and Amplification

文件：1.38144 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：C1675；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector Current General Purpose Switching and Amplification

文件：1.38144 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：C16XY；Package：SOT23-6L；Low Capacitance High ESD Level Protection Array For High Speed I/O Port

Features
ESD Protect for 4 high-speed I/O lines and one VDD line
Provide ESD protection for each line to IEC 61000-4-2,(ESD) ±27kV (air), ±16kV (contact) IEC 61000-4-4 (EFT) Level-3, 55A (5/50ns) IEC 61000-4-5 (Lightning) 6A (8/20μs)
For low operating voltage applications: 5V, 4.2V,

文件：275.77 Kbytes 页数：11 Pages

AMAZING

晶焱科技

丝印：C16K；Package：SOIC-8；EEPROM Serial 2/4/8/16Kb I2C

Description The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized internally as 8/16/32/64 and 128 pages respectively of 16 bytes each. All devices support both the Standard (100 kHz) as well as Fast (400 kHz) I2 C protocol. Data is writt

文件：216.23 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

丝印：C16244AQ1；Package：TSSOP；16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Qualification in Accordance With AEC-Q100 (1) · Qualified for Automotive Applications · Customer-Specific Configuration Control Can Be Supported Along With Major-Change Approval · Controlled Baseline – One Assembly/Test Site, One Fabrication Site · Enhanced Diminishing Manufact

文件：904.64 Kbytes 页数：14 Pages

TI

德州仪器

丝印：C16244AQ1；Package：TSSOP；16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Qualification in Accordance With AEC-Q100 (1) · Qualified for Automotive Applications · Customer-Specific Configuration Control Can Be Supported Along With Major-Change Approval · Controlled Baseline – One Assembly/Test Site, One Fabrication Site · Enhanced Diminishing Manufact

文件：904.64 Kbytes 页数：14 Pages

TI

德州仪器