10BJ11CA

Marking：C11；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ11CA

Marking：C11；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

RGTV60TS65

Marking：C11；Package：TO-247N；650V 30A Field Stop Trench IGBT

RGTV60TS65D

Marking：C11；Package：TO-247N；650V 30A Field Stop Trench IGBT

RGTVX6TS65

Marking：C11；Package：TO-247N；650V 80A Field Stop Trench IGBT

SCT3022AL

Marking：C11；Package：TO-247N；N-channel SiC power MOSFET

SCT3022KL

Marking：C11；Package：TO-247N；N-channel SiC power MOSFET

10SMBJ110CA

Marking：C110；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

2SC1162

Marking：C1162；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES LowFrequencyPowerAmplifier

2SC1162-TU

Marking：C1162；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES LowFrequencyPowerAmplifier