丝印：C11；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C11；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C11；Package：TO-247N；650V 30A Field Stop Trench IGBT

文件：1.07985 Mbytes 页数：11 Pages

ROHM

罗姆

丝印：C11；Package：TO-247N；650V 30A Field Stop Trench IGBT

文件：1.33461 Mbytes 页数：13 Pages

ROHM

罗姆

丝印：C11；Package：TO-247N；650V 80A Field Stop Trench IGBT

文件：1.11669 Mbytes 页数：11 Pages

ROHM

罗姆

丝印：C11；Package：TO-247N；N-channel SiC power MOSFET

文件：736.87 Kbytes 页数：14 Pages

ROHM

罗姆

丝印：C11；Package：TO-247N；N-channel SiC power MOSFET

文件：737.07 Kbytes 页数：14 Pages

ROHM

罗姆

丝印：C110；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C1162；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier

文件：1.03564 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：C1162；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier

文件：1.03564 Mbytes 页数：3 Pages

DGNJDZ

南晶电子