丝印：C005；Package：SOT-23(DBV)；SN74LVC1G00 Single 2-Input Positive-NAND Gate

1 Features 1• Available in the Ultra Small 0.64-mm2 Package (DPW) With 0.5-mm Pitch • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 3.8 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff S

文件：2.25185 Mbytes 页数：44 Pages

TI

德州仪器

丝印：C005；Package：SOT-23(DBV)；SN74LVC1G00 Single 2-Input Positive-NAND Gate

1 Features 1• Available in the Ultra Small 0.64-mm2 Package (DPW) With 0.5-mm Pitch • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 3.8 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff S

文件：2.25185 Mbytes 页数：44 Pages

TI

德州仪器

丝印：C005；Package：SOT-23(DBV)；SN74LVC1G00 Single 2-Input Positive-NAND Gate

1 Features 1• Available in the Ultra Small 0.64-mm2 Package (DPW) With 0.5-mm Pitch • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 3.8 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff S

文件：2.25185 Mbytes 页数：44 Pages

TI

德州仪器

丝印：C005；Package：SOT-23(DBV)；SN74LVC1G00 Single 2-Input Positive-NAND Gate

1 Features 1• Available in the Ultra Small 0.64-mm2 Package (DPW) With 0.5-mm Pitch • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 3.8 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff S

文件：2.25185 Mbytes 页数：44 Pages

TI

德州仪器

丝印：C005；Package：SOT-23(DBV)；SN74LVC1G00 Single 2-Input Positive-NAND Gate

1 Features 1• Available in the Ultra Small 0.64-mm2 Package (DPW) With 0.5-mm Pitch • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 3.8 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff S

文件：2.25185 Mbytes 页数：44 Pages

TI

德州仪器

丝印：C005N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

文件：807.5 Kbytes 页数：4 Pages

DOINGTER

杜因特

丝印：C005P；Package：DFN5*6-8；P-Channel MOSFET uses advanced trench technology

文件：1.22629 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：C005AJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体

丝印：C005CJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体

丝印：C005N；Package：DFN3*3-8；N-Channel MOSFET uses advanced trench technology

文件：873.16 Kbytes 页数：4 Pages

DOINGTER

杜因特