SN74LVC2G00DCTRE4

Marking：C00；Package：SM8；Dual 2-Input Positive-NAND Gate

SSF7500

Marking：C00；Package：SOT-323；N-Channel Enhancement Mode Power MOSFET

BL2300

Marking：C009T；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

FEATURES -VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0A -VDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0A -VDS=20V,,RDS(ON)=75m@VGS=1.8V,ID=1.0A APPLICATIONS -PowerManagementinNotebook. -PortableEquipment. -BatteryPoweredSystem. -LoadSwitch. -DSC.

TTC004B

Marking：C004B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

(1)Highcollectorvoltage:VCEO=160V(min) (2)ComplementarytoTTA004B (3)Smallcollectoroutputcapacitance:Cob=12pF(typ.) (4)Hightransitionfrequency:fT=100MHz(typ.)

TTC008

Marking：C008；Package：PW-Mold2；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications •High-SpeedHigh-VoltageSwitching •SwitchingVoltageRegulators •High-SpeedDC-DCConverters Features (1)Highcollector-emittervoltage:VCEO=285V,VCES=600V (2)HighDCcurrentgain:hFE=100to200(IC=0.3A) (3)Excellentswitchingtimes:tf=0.1μs(typ.)

DC005NG

Marking：C005N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

DC006NG

Marking：C006N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

DC006NG-B

Marking：C006N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

NC003TG

Marking：C003T；Package：DFN5*6-8；N-Channel MOSFET uses advanced SGT technology

NC005PG

Marking：C005P；Package：DFN5*6-8；P-Channel MOSFET uses advanced trench technology