FDD2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •4.7A,150V.RDS(ON)=80mΩ@VGS=10VRDS(ON)=90mΩ@VGS=6V •Lowgatecharge

FDD2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.7A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD2570

N-channelEnhancementModePowerMOSFET

Features VDS=150V,ID=20A RDS(ON)

FDP2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDP2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesigned specificallyforswitchingontheprimarysideinthe isolatedDC/DCconverterapplication.Anyapplication requiringa150VMOSFETswithlowon-resistanceand fastswitchingwillbenefit. TheseMOSFETsfeaturefastersw

FDS2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •4A,150V.RDS(ON)=80mΩ@VGS=10VRDS(ON)=90mΩ@VGS=6V •Lowgatecharge •

FDS2570

150VN-ChannelPowerTrenchMOSFET

FDS2570

PowerConverterTopologyandMOSFETSelectionfor48-VTelecom

H2570

CONTROLLER

HCX-2570

For3.7V1SLi-ion/Li-PolymerBatteryPacks

1.Features Thisprotectioncircuitisspeciallydesignedfor3.7VLi-ion/Li-PolymerBattery; Topreventbatteriesfromovercharge,overdischarge,overcurrent,shortcircuit.