BUK6E2R0-30C中文资料安世数据手册PDF规格书

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for intermediate level gate

drive sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V Automotive systems

 Electric and electro-hydraulic power

steering

 Motors, lamps and solenoid control

 Start-Stop micro-hybrid applications

 Transmission control

 Ultra high performance power

switching