N-channel TrenchMOS intermediate level FET

1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive appl

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NEXPERIA

安世

N-channel TrenchMOS intermediate level FET

文件：402.02 Kbytes 页数：15 Pages

恩XP

N-channel TrenchMOS intermediate level FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.

Nexperia

安世

D2PAK

NEXPERIA

安世

上传：万三科技(深圳)有限公司

D2PAK

NEXPERIA/安世

上传：深圳市盈慧通电子有限公司