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BUK652R3-40C中文资料安世数据手册PDF规格书
BUK652R3-40C规格书详情
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
产品属性
- 型号：
BUK652R3-40C
- 功能描述：
MOSFET N-CHAN 40V 120A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
31500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VB |
25+ |
TO-220AB |
515 |
原装正品,假一罚十! |
询价 | ||
VBsemi |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
恩XP |
25+ |
SOT78 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
询价 | ||
VBsemi/台湾微碧 |
21+ |
TO-220AB |
516 |
原装现货假一赔十 |
询价 | ||
恩XP |
20+ |
TO-220AB |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
恩XP |
24+ |
TO220 |
6618 |
公司现货库存,支持实单 |
询价 | ||
VBsemi |
24+ |
TO220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
恩XP |
22+ |
TO-220AB |
25000 |
只做原装进口现货,专注配单 |
询价 |
