Smart High-Side Power Switch PROFET One Channel, 10 m?

Product Summary The BTS 6123P is a one channel high-side power switch in P-TO-220-7-230 package providing embedded protective functions including ReverSave™. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip tech

文件：906.1 Kbytes 页数：30 Pages

INFINEON

英飞凌

Smart High-Side Power Switch PROFET One Channel, 10 mΩ

Infineon

英飞凌

Package：TO-220-7；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH N-CHAN 1:1 TO220-7

INFINEON

英飞凌

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power diss

文件：48.52 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor

文件：602.74 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • DC-DC converters, r

文件：602.74 Kbytes 页数：8 Pages

ONSEMI

安森美半导体