零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt™Technology 1Features •Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A •Widecommon-moderange:–0.1Vto+85V •High-resolution,16-bitdelta-sigmaADC •Currentmonitoringaccuracy:A/BGrad | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
CrystalClockOscillatorSpecification | IQD IQD Frequency Products Ltd | IQD | ||
PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=10A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFETs,10A,350V/400V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
POWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | SUNTAC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | Vishay | ||
10A,400V,0.550Ohm,N-ChannelPowerMOSFET 10A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
N-ChannelPowerMOSFETs | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
10A400VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | FCI Amphenol ICC | FCI | ||
N-ChannelPowerMOSFET DESCRIPTION TheNellIRF740areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Switchmodepowersupply •Uninterruptablepowersupply •Highspeedpowerswitching •FEATURES •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed •MinimumLot-to-Lotvariationsforrobustdev | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
N-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent-ID=10A@TC=25°C •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersup | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay |
产品属性
- 产品编号:
BT740-SC
- 制造商:
Laird Connectivity Inc.
- 类别:
RF/IF,射频/中频和 RFID > 射频收发器模块和调制解调器
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 射频系列/标准:
蓝牙
- 协议:
蓝牙 2.1,1 类
- 频率:
2.4GHz
- 数据速率:
2.1Mbps
- 功率 - 输出:
18dBm
- 灵敏度:
-87dBm
- 串行接口:
UART
- 天线类型:
不含天线,U.FL
- 使用的 IC/零件:
BlueCore4
- 电压 - 供电:
3.3V ~ 5V
- 电流 - 接收:
35mA
- 电流 - 传输:
35mA
- 安装类型:
表面贴装型
- 工作温度:
-40°C ~ 85°C
- 封装/外壳:
模块
- 描述:
RX TXRX MOD BLUETOOTH U.FL SMD
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LAIRD |
RoHSCompliant |
原厂封装 |
22 |
neworiginal |
询价 | ||
LAIRD |
20+ |
NA |
90000 |
全新原装正品/库存充足 |
询价 | ||
Laird |
20+ |
模块 |
960 |
无线通信IC,大量现货! |
询价 | ||
LAIRD |
20+ |
射频元件 |
155 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
LAIRD |
2022+ |
2013+ |
7300 |
原装现货 |
询价 | ||
LAIRD |
2147+ |
原厂封装 |
12500 |
原厂原装现货,订货价格优势,终端BOM表可配单提供样 |
询价 | ||
Laird Connectivity |
23+ |
sop |
10000 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
LAIRD |
23+ |
2013+ |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
LAIRD |
2305+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
LAIRD |
23+ |
2013+ |
7300 |
专注配单,只做原装进口现货 |
询价 |
相关规格书
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- BT800
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- BTA08-700CRG
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- BTA12-800BRG
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