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INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt™Technology

1Features •Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A •Widecommon-moderange:–0.1Vto+85V •High-resolution,16-bitdelta-sigmaADC •Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

IQXO-740

CrystalClockOscillatorSpecification

IQD

IQD Frequency Products Ltd

IRC740

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF740

N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET

ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF740

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF740

N-ChannelPowerMOSFETs,10A,350V/400V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF740

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

IRF740

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

IRF740

10A,400V,0.550Ohm,N-ChannelPowerMOSFET

10A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRF740

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis

DCCOMDc Components

直流元件直流元件有限公司

IRF740

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF740

10A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

FCI

Amphenol ICC

IRF740

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF740areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF740

iscN-ChannelMOSFETTransistor

•DESCRITION •Switchmodepowersupply •Uninterruptablepowersupply •Highspeedpowerswitching •FEATURES •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed •MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF740

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF740

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent-ID=10A@TC=25°C •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersup

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF740

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

IRF740

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF740A

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF740A

PowerMOSFET

VishayVishay Siliconix

威世科技

产品属性

  • 产品编号:

    BT740-SC

  • 制造商:

    Laird Connectivity Inc.

  • 类别:

    RF/IF,射频/中频和 RFID > 射频收发器模块和调制解调器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 射频系列/标准:

    蓝牙

  • 协议:

    蓝牙 2.1,1 类

  • 频率:

    2.4GHz

  • 数据速率:

    2.1Mbps

  • 功率 - 输出:

    18dBm

  • 灵敏度:

    -87dBm

  • 串行接口:

    UART

  • 天线类型:

    不含天线,U.FL

  • 使用的 IC/零件:

    BlueCore4

  • 电压 - 供电:

    3.3V ~ 5V

  • 电流 - 接收:

    35mA

  • 电流 - 传输:

    35mA

  • 安装类型:

    表面贴装型

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    模块

  • 描述:

    RX TXRX MOD BLUETOOTH U.FL SMD

供应商型号品牌批号封装库存备注价格
LAIRD
RoHSCompliant
原厂封装
22
neworiginal
询价
LAIRD
20+
NA
90000
全新原装正品/库存充足
询价
Laird
20+
模块
960
无线通信IC,大量现货!
询价
LAIRD
20+
射频元件
155
就找我吧!--邀您体验愉快问购元件!
询价
LAIRD
2022+
2013+
7300
原装现货
询价
LAIRD
2147+
原厂封装
12500
原厂原装现货,订货价格优势,终端BOM表可配单提供样
询价
Laird Connectivity
23+
sop
10000
现货常备产品原装可到京北通宇商城查价格
询价
LAIRD
23+
2013+
7300
专注配单,只做原装进口现货
询价
LAIRD
2305+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
LAIRD
23+
2013+
7300
专注配单,只做原装进口现货
询价
更多BT740-SC供应商 更新时间2024-5-16 10:20:00