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BSZ110N06NS3G

OptiMOS3 Power-Transistor

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDECfortarge

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

110N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

HY110N06T

55V/110AN-ChannelEnhancementModeMOSFET

55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features •LowOn-StateResistance •ExcellentGateChargexRDS(ON)Product(FOM) •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl •I

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

IPB110N06L

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB110N06LG

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB110N06L-G

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP110N06L

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP110N06LG

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP110N06L-G

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXFK110N06

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching

IXYS

IXYS Integrated Circuits Division

IXFK110N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TSM110N06

55VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

详细参数

  • 型号:

    BSZ110N06N

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    OptiMOS3 Power-Transistor

供应商型号品牌批号封装库存备注价格
INF
19+
QFN
19450
询价
Infineon(英飞凌)
23+
TSDSON-8TS
5509
原厂直供,支持账期,免费供样,技术支持
询价
原装
24+
标准
48329
热卖原装进口
询价
Infineon/英飞凌
23+
QFN8
69000
全新原装现货热卖/代理品牌/可申请样品和规格书
询价
INFINEON/英飞凌
2021+
DFN-83.3X3.3
17676
原装进口假一罚十
询价
INFINEON/英飞凌
2024+实力库存
PG-TSDSON-8
33371
只做原厂渠道 可追溯货源
询价
Infineon(英飞凌)
22+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Infineon(英飞凌)
23+
NA
7000
原装正品!假一罚十!
询价
INFINEON
100000
代理渠道/只做原装/可含税
询价
INFINEON
21+
TSDSON-8
385
只做原装正品
询价
更多BSZ110N06N供应商 更新时间2024-6-14 16:03:00