丝印：0909NS；Package：PG-TSDSON-8；n-Channel Power MOSFET

1.Description OptiMOS ™ 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements

文件：1.23512 Mbytes 页数：11 Pages

INFINEON

英飞凌

20V-300V N-Channel Power MOSFET

极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6） • 极低的栅极和输出电荷\n• 极低的导通状态电阻，小体积封装\n• 设计导入容易\n\n优势:\n• 延长电池寿命\n• 改进 EMI 表现，无需外部缓冲器网络\n• 节省成本\n• 节约空间 \n• 减少功率损耗;

Infineon

英飞凌

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP.

文件：22.93 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP.

文件：22.93 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

0.25 Watt SIP4 & DIP8 Single Output

文件：101.43 Kbytes 页数：3 Pages

RECOM