OptiMOS ™低压功率 MOSFET - 完美满足充电器和适配器设计的需求

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Infineon

英飞凌

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP.

文件：22.93 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP.

文件：22.93 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

0.25 Watt SIP4 & DIP8 Single Output

文件：101.43 Kbytes 页数：3 Pages

RECOM