P-channel enhancement mode vertical D-MOS transistors

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. FEATURES • Direct interface to C-MOS, TTL etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in telephone sets and for applications i

文件：75.87 Kbytes 页数：9 Pages

PHI

飞利浦

P-channel enhancement mode vertical D-MOS transistors

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. FEATURES • Direct interface to C-MOS, TTL etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in telephone sets and for applications i

文件：75.87 Kbytes 页数：9 Pages

PHI

飞利浦

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications.

文件：43.88 Kbytes 页数：8 Pages

PHI

飞利浦

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE - BSP31 - BSP41 BSP33 - BSP43 PARTMARKING DETAIL - Device type in full

文件：47.36 Kbytes 页数：1 Pages

Zetex

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：174.92 Kbytes 页数：2 Pages

Diotec

德欧泰克

PNP medium power transistors

FEATURES •High current (max. 1 A) •Low voltage (max. 80 V). APPLICATIONS •Telephony and general industrial applications. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43.

文件：327 Kbytes 页数：7 Pages

NEXPERIA

安世

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■ NPN COMPLEMENTS ARE BSP40, BSP41, B

文件：73.15 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

3-Pole LED Driver & Ballast Surge Protectors

Features BSP3 series products are designed to be used in conjunction with LED Drivers to provide an additional level of protection against powerline disturbances in industrial and commercial applications. BSP3 products also protect electronic fluorescent and HID ballasts. The BSP3 Series are

文件：795.61 Kbytes 页数：2 Pages

HUBBELL

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

文件：174.92 Kbytes 页数：9 Pages

SIEMENS

西门子

Green device available.

Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RD

文件：725.7 Kbytes 页数：5 Pages

KERSEMI